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  continental device india limited data sheet page 1 of 3 general purpose transistor p?n?p transistor marking CMBT4126 = 5e absolute maximum ratings collector?base voltage (open emitter) ?v cbo max. 25 v collector?emitter voltage (open base) ?v ceo max. 25 v emitter?base voltage (open collector) ?v ebo max. 4 v collector current (d.c.) ? i c max. 200 ma total power dissipation at t amb = 25c p tot max 350 mw d.c. current gain min. 120 ?i c = 2 ma; ?v ce = 1 v h fe max. 360 ratings (at t a = 25c unless otherwise specified) limiting values collector?base voltage (open emitter) ?v cbo max. 25 v collector?emitter voltage (open base) ?v ceo max. 25 v emitter?base voltage (open collector) ?v ebo max. 4 v collector current (d.c.) ? i c max. 200 ma CMBT4126 package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 sot-23 formed smd package continental device india limited an iso/ts16949 and iso 9001 certified company
continental device india limited data sheet page 2 of 3 total power dissipation at t amb = 25c p tot max 350 mw storage temperature t stg ?55 to +150 c junction temperature tj max. 150 c thermal characteristics t j = p (r th j?t + r th s?a ) + t amb thermal resistance from junction to ambient r th j?a 556 c/mw characteristics (at t a = 25c unless otherwise specified) collector?emitter breakdown voltage ?i c = 1 ma; i b = 0 ?v (br)ceo min. 25 v collector?base breakdown voltage ?i c = 10 m a; i e = 0 ?v (br)cbo min. 25 v emitter?base breakdown voltage ?i e = 10 m a; i c = 0 ?v (br)ebo min. 4 v collector cut?off current ?v cb = 20 v; i e = 0 v ?i cbo max. 50 na emitter cut?off current v be = 3 v; i c =0 i ebo max. 50 na output capacitance at f = 1 mhz i e = 0; ?v cb = 5 v c c max. 4.5 pf input capacitance at f = 1 mhz i c = 0; ?v be = 0.5 v c e max. 10 pf saturation voltages ?v cesat max. 0.4 v ?i c = 50 ma; ?i b = 5 ma ?v besat max. 0.95 v d.c. current gain min. 120 ?i c = 2 ma; ?v ce = 1 v h fe max. 360 ?i c = 50 ma; ?v ce = 1 v h fe min. 60 noise figure at r s = 1 kw ?i c = 100 m a; ?v ce = 5 v f = 10 hz to 15.7 khz nf max. 4 db small signal current gain ?v ce = 1v; ?i c = 2 ma; f = 1 khz h fe min. 120 max. 480 transition frequency ?v ce = 20v; ?i c = 10 ma; f = 100 mhz f t min. 250 mhz CMBT4126
continental device india limited data sheet page 3 of 3 customer notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd are believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com


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